t4 - lds -0 278 -1, rev . 2 (1 1/1 9 /13 ) ?201 3 microsemi corporation page 1 of 7 1n613 8a us C 1n6173a us available on commercial versions v oidless h ermetically s ealed s urface m ount b idirectional t ransient v oltage s uppressors qualified to mil -prf- 19500/516 qualified levels : jan, jantx , jantxv and jans description this surface mount series of industry recognized voidless, hermetically sealed , b idirectional transient voltage suppressor (tvs) designs are military qualified to mil - prf - 19500/516 and are ideal for high - reliability applica tions where a failure cannot be tolerated. they provide a w orking p eak s tandoff v oltage selection from 5. 2 to 152 v olts with a 1500 watt rating for a 10/1000 us pulse . they are very robust in hard - glass construction and use internal category 1 metallur gical bonds for high reliability. t hese are also available as both a non suffix part and an a version part involving different voltage tolerances as further described in the nomenclature section . these devices are also available in axial - leaded packages for thru - hole mounting. c or sq- melf package also available in : c package ( axial - leaded ) 1n61 38 C 1n 61 73 important: for the latest in formation, visit our website http://www.microsemi.com . features ? high surge current and peak pulse power provides transient voltage protection for sensitive circuits ? triple - layer passivation ? internal category 1 metallurgical bonds ? voidless hermetically sealed glass package ? jan, jantx, jantxv and jans qu alified versions are available per mil - prf - 19500/ 516. (see part nomenclature for all available options.) ? rohs complian t versions available (commercial grade only) applications / benefits ? military and other high - reliability applications ? extremely robust construction ? extensive range in w orking p eak s tandoff v oltage (v wm ) from 5. 2 to 152 volts ? 1500 w att p eak p ulse p owe r (p pp ) for a 10/1000 us pulse ? esd and eft protection per iec6100 -4- 2 and iec61000 -4- 4 respectively ? protection from the secondary effects of lightning pe r select levels in iec61000 -4-5 ? square - end - cap terminals for easy placement ? non - sensitive to esd per mi l- s td - 750 m ethod 1020 ? inherently radiation hard as described in microsemi micronote 050 m axim um ratings @ t a = 25 o c unless otherwise noted. msc C law rence 6 lake street , lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ire land tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage t emperature t j and t stg -5 5 to + 175 o c thermal resistance junction - to - end cap r ? j ec 5.0 o c /w peak pulse power @ 25 oc (10/1000 s) p pp 1500 w off - state power up to t ec = 150 o c (1) p d 5.0 w off - state power @ t a = 25 o c (2) p d 3.0 w impulse repetition rate df 0.01 % solder temperature @ 10 s t sp 260 o c notes : 1. linearly derate above t ec =150 o c to zero at t ec =175 o c. 2. steady - state power ratings with reference to ambient are for pc boards where the rmal resistance from mounting point to ambient is sufficiently controlled where t op or t j(max) is not exceeded (also see f igure 6 ). downloaded from: http:///
t4 - lds -0 278 -1, rev . 2 (1 1/1 9 /13 ) ?201 3 microsemi corporation page 2 of 7 1n613 8a us C 1n6173a us mechanical and packaging ? case: hermetically sealed voidless hard glass with t ungsten slugs ? terminals: t in/ l ead plate over c opper. rohs compliant matte -t in is available on commercial grade only. ? marking: none ? polarity: no polarity marking for these bidirectional tvss ? tape & ree l option: standard per eia - 481 -b . consult factory for quantities. ? w eight: approximatel y 1 100 milligrams ? see p ackage d imensions on last page. part nomenclature jan 1n61 38 a us e3 reliability level jan = jan level jantx = jantx level jantxv = jantxv level jans = jans level blank = c ommercial j edec type number see electrical characteristics t able rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant surface mount package voltage tolerance a = standard blank =5% higher v c , 5% lower min. v (br) and 5% lower i pp symbols & definitions symbol definition v( br) temperature coefficient of breakdown voltage: the change in breakdown voltage divided by the change in temperature that caused it expressed in %/ c or mv/ c. v ( br) breakdown voltage: the voltage across the device at a specified current i (br) in the breakdown region. v wm wo rking s tandoff v oltage: the maximum - rated value of dc or repetitive peak positive cathode - to - anode voltage that may be continuously applied over the standard operating temperature. i d standby current: the current through the device at rated stand - off volta ge. v c clamping voltage: the voltage across the device in a region of low differential resistance duri ng the application of an impulse current (i pp ) for a specified waveform. p pp peak pulse power. the rated random recurring peak impulse power or rated nonrepetitive peak impulse power . the impulse power is the maximum - rated value of the product of i pp and v c . downloaded from: http:///
t4 - lds -0 278 -1, rev . 2 (1 1/1 9 /13 ) ?201 3 microsemi corporation page 3 of 7 1n613 8a us C 1n6173a us electrical characteristics industry type number (note 1 ) minimum breakdown voltage (note 1) v (br) @ i (br) rated standoff voltage v wm maximum standby current i d @ v wm maximum clamping voltage (note 1) v c @ i pp maximum peak pulse current (note 1) i pp maximum temp. coef. of v ( br) v (br) volts ma v a volts amps %/ o c 1n6138aus 6 .46 175 5.2 500 10.5 142.8 0.05 1n6139a us 7.13 175 5.7 300 11.2 133.9 0 .06 1n6140a us 7.79 150 6.2 100 12.1 124.0 0 .06 1n6141a us 8.65 150 6.9 100 13.4 111.9 0 .06 1n6142a us 9.50 125 7.6 100 14.5 103.4 0 .07 1n6143a us 10.45 125 8.4 20 15.6 96.2 0 .07 1n6144a us 11.40 100 9.1 20 16.9 88.8 0 .07 1n6145a us 12.35 100 9.9 20 18.2 82.4 0 .08 1n6146a us 14.25 75 11.4 20 21.0 71.4 0 .08 1n6147a us 15.20 75 12.2 20 22.3 67.3 0 .08 1n6148a us 17.10 65 13.7 10 25.1 59.8 0 .085 1n6149a us 19.0 65 15.2 5 27.7 54.2 0 .085 1n6150a us 20.9 50 16.7 5 30.5 49.2 0 .085 1n6151a us 22.8 50 18.2 5 33.3 45.0 0 .09 1n6152a us 25.7 50 20.6 5 37.4 40.1 0 .09 1n6153a us 28.5 40 22.8 5 41.6 36.0 0 .09 1n6154a us 31.4 40 25.1 5 45.7 32.8 0 .095 1n6155a us 34.2 30 27.4 5 49.9 30.1 0 .095 1n6156a us 37.1 30 29.7 5 53.6 28.0 0 .095 1n6157a us 40.9 30 32.7 5 59.1 25.4 0 .095 1n6158a us 44.7 25 35.8 5 64.6 23.2 0 .095 1n6159a us 48.5 25 38.8 5 70.1 21.4 0 .095 1n6160a us 53.2 20 42.6 5 77.0 19.5 0 .095 1n6161a us 58.9 20 47.1 5 85.3 17.6 0 .100 1n6162a us 64. 6 20 51.7 5 97.1 15.4 0 .100 1n6163a us 71.3 20 56.0 5 103.1 14.5 0 .100 1n6164a us 77.9 15 62.2 5 112.8 13.3 0 .100 1n6165a us 86.5 15 69.2 5 125.1 12.0 0 .100 1n6166a us 95.0 12 76.0 5 137.6 10.9 0 .100 1n6167a us 104.5 12 86.6 5 151.3 9.9 0 .100 1n6168a us 114.0 10 91.2 5 165.1 9.1 0 .100 1n6169a us 123.5 10 98.8 5 178.8 8.4 0 .105 1n6170a us 142.5 8 114.0 5 206.3 7.3 0 .105 1n6171a us 152.0 8 121.6 5 218.4 6.9 0 .105 1n6172a us 171.0 5 136.8 5 245.7 6.1 0 .110 1n6173a us 190.0 5 152.0 5 273.0 5.5 0 .110 notes: 1. part number without the a suffix has 5% higher v c , 5% lower minimum v (br) , and 5% lower i pp . downloaded from: http:///
t4 - lds -0 278 -1, rev . 2 (1 1/1 9 /13 ) ?201 3 microsemi corporation page 4 of 7 1n613 8a us C 1n6173a us graphs pulse time (t p ) figure 1 peak pulse power vs. pulse time junction temperature (t j ) in c figure 2 peak pulse power vs t j (prior to impulse) peak pulse power (p pp ) max peak pulse power (p pp ) or current (i pp ) in percent of max ratings downloaded from: http:///
t4 - lds -0 278 -1, rev . 2 (1 1/1 9 /13 ) ?201 3 microsemi corporation page 5 of 7 1n613 8a us C 1n6173a us graphs time (t) in milliseconds figure 3 pulse wave form t a (c) (ambient) figure 4 temperature - power derating curve pulse current (i pp) in percent of i pp dc operation (w) maximum rati ng downloaded from: http:///
t4 - lds -0 278 -1, rev . 2 (1 1/1 9 /13 ) ?201 3 microsemi corporation page 6 of 7 1n613 8a us C 1n6173a us graphs ambient temperature (t a ) in c figure 5 steady - state derating curve for free - air mounting (r ja = 50 oc /w) maximum steady - state power in watts downloaded from: http:///
t4 - lds -0 278 -1, rev . 2 (1 1/1 9 /13 ) ?201 3 microsemi corporation page 7 of 7 1n613 8a us C 1n6173a us package dimensions not es: 1 . d imension s a re in inches . 2 . m illime te rs a re gi ven fo r gene ral in for ma t io n onl y. 3 . minimum clearance of glass body to mounting surface on all orientations . 4 . in acco r danc e wi th as m e y 14 .5m, diame te rs a re equi v alen t to x sy mbolog y. pad layout note : if mounting requires adhesive separate from the solder, an additional 0.090 inch (2.29 mm) diameter contact may be placed in the center between the pads as an optional spot for ceme nt. l tr d ime n si ons not es i nc h m illime ters min max min max bd 0 .1 83 0 .202 4.65 5.13 bl 0 .205 0 .245 5.21 6.22 ect 0 .019 0 .028 0.48 0.71 s 0 .003 - 0.08 - 4 dim inch millimeters a1 0. 310 7.87 a2 0.170 4.32 b 0.070 1.78 c 0.205 5.21 downloaded from: http:///
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